β- SiC bonded silicon carbide brick is produced the by the combining of the original SiC particles and β- SiC generated by in-situ reaction of metal silicon powder and carbon powder in raw materials at high temperature，the bonded phase has small grain size and high activity, the oxidation resistance and resistance to water vapor oxidation erosion and mechanical strength is slightly inferior to Si3N4 bonded silicon carbide brick, but other properties are close to both.
Recrystallized silicon carbide brick, also known as R-SiC, is bonded by adding effective surfactant to α-SiC raw material and sintering at high temperature in protective atmosphere to make SiC evaporate and coalesce and recrystallize at the SiC particle bond. It has excellent properties such as high strength at high temperature, light weight, no slagging, good thermal conductivity, less heat storage, long life, etc. It is widely used in ceramics, petrochemical, aerospace and other fields, and is an excellent high temperature engineering material.
| Items | Specifications | |
| β-SiC Bonded SiC | Recrystallized SiC | |
| SiC % | ≥94 | ≥99 |
| Bulk Density g/cm3 | ≥2.63 | ≥2.65 |
| Apparent Porosity % | ≤17 | ≤15 |
| CMOR MPa | ≥30 | ≥90 |
| HMOR MPa 1400℃ | ≥30 | ≥90 |
| CCS MPa | ≥140 | ≥300 |
| Thermal Expansion Coefficient
℃-1 20~1000℃ |
5.5×10-6 | 4.8×10-6 |
| Thermal Conductivity
W/(m·K) 1000℃ |
≥12 | ≥20 |